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FDS86141 |
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| Part Number | FDS86141 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 36 mΩ at VGS = 6 V, ID = 5.5 A High performance trench technology for extremely low rDS(on) 100% UIL Tested RoHS Compliant This N-... |
| Features |
General Description
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 36 mΩ at VGS = 6 V, ID = 5.5 A High performance trench technology for extremely low rDS(on) 100% UIL Tested RoHS Compliant
This N-Channel MOSFET is produced using ON Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintaiin superior switching performance.
Applications
DC-DC Conversion
D D D D
SO-8
Pin 1
G S S S
D5 D6 D7 D8
4G 3S 2S 1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS
PD
TJ,... |
| Document |
 FDS86141 Data Sheet
PDF 327.05KB |
| Distributor | Stock | Price | Buy |
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