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FDS86106 |
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| Part Number | FDS86106 |
| Manufacturer | Fairchild Semiconductor |
| Description | Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 3.4 A Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) High power and current handling capab... |
| Features |
General Description
Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 3.4 A Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used
surface mount package
100% UIL Tested
RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and
ruggedness.
Applications
Synchronous Rectifier
Primary Switch For Bridge Topology
D D D
D
SO-8
Pin 1
G S S S
D5 D6 D7 D8
4G 3S ... |
| Document |
 FDS86106 Data Sheet
PDF 214.50KB |
| Distributor | Stock | Price | Buy |
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