FDMC6686P - ON Semiconductor

FDMC6686P P-Channel MOSFET

This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for RDS(ON), switching performance and ruggedness. Features • Max RDS(on) = 4 mW at VGS = −4.5 V, ID = −18 A • Max RDS(on) = 5.7 mW at VGS = −2.5 V, ID = −16 A • Max RDS(on) =11.5 mW at VGS = −1.8 V, ID = −11 A • High Performance Trench Technology for Extrem.

Features

• Max RDS(on) = 4 mW at VGS = −4.5 V, ID = −18 A
• Max RDS(on) = 5.7 mW at VGS = −2.5 V, ID = −16 A
• Max RDS(on) =11.5 mW at VGS = −1.8 V, ID = −11 A
• High Performance Trench Technology for Extremely Low RDS(on)
• High Power and Current Handling Capability in a Widely Used Surface Mount Package
• This Device is Pb−Free, Halide Free and is RoHS Compliant Applications
• Load Switch
• Battery Management
• Power Management
• Reverse Polarity Protection MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Volt.