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Max rDS(on) = 6.5 mΩ at VGS = -4.5 V, ID = -14 A Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -11 A Max rDS(on) = 20 mΩ at VGS = -1.8 V, ID = -9 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Lead-free and RoHS Compliant This P-Channel MOSFET is prod.
General Description Max rDS(on) = 6.5 mΩ at VGS = -4.5 V, ID = -14 A Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -11 A Max rDS(on) = 20 mΩ at VGS = -1.8 V, ID = -9 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Lead-free and RoHS Compliant This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness. Applications Load Switch Battery Management Power Management Reverse .
FDMC6688P - ON Semiconductor
This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for RDS(on), switc.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDMC6686P |
Fairchild Semiconductor |
MOSFET |
|
| 2 | FDMC6686P |
ON Semiconductor |
P-Channel MOSFET |
|
| 3 | FDMC6675BZ |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 4 | FDMC6675BZ |
ON Semiconductor |
P-Channel MOSFET |
|
| 5 | FDMC6679AZ |
On Semiconductor |
P-Channel MOSFET |
|
| 6 | FDMC6679AZ |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 7 | FDMC6696P |
ON Semiconductor |
P-Channel Power MOSFET |
|
| 8 | FDMC610P |
Fairchild Semiconductor |
MOSFET |
|
| 9 | FDMC610P |
ON Semiconductor |
P-Channel MOSFET |
|
| 10 | FDMC612PZ |
Fairchild Semiconductor |
MOSFET |
|
| 11 | FDMC6296 |
Fairchild Semiconductor |
Single N-Channel Logic-Level Power Trench MOSFET |
|
| 12 | FDMC6890NZ |
Fairchild Semiconductor |
Dual N-Channel PowerTrench MOSFET |
|