FDMC6696P - ON Semiconductor

FDMC6696P P-Channel Power MOSFET

This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for RDS(on), switching performance and ruggedness. Features • Max RDS(on) = 4.9 mW at VGS = −4.5 V, ID = −18 A • Max RDS(on) = 16.4 mW at VGS = −1.8 V, ID = −9 A • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling.

Features

• Max RDS(on) = 4.9 mW at VGS = −4.5 V, ID = −18 A
• Max RDS(on) = 16.4 mW at VGS = −1.8 V, ID = −9 A
• High Performance Trench Technology for Extremely Low RDS(on)
• High Power and Current Handling Capability in a Widely Used Surface Mount Package
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications
• Load Switch
• Battery Management
• Power Management
• Reverse Polarity Protection MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage −20 V VGS Gate to Source Voltage ±12 V ID Drain Current: .