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FDMC6686P |
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| Part Number | FDMC6686P |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for RDS(ON), switching performance and ruggedness. Features • Max RDS(on) = 4 mW at VGS = −4.5 V, ... |
| Features |
• Max RDS(on) = 4 mW at VGS = −4.5 V, ID = −18 A • Max RDS(on) = 5.7 mW at VGS = −2.5 V, ID = −16 A • Max RDS(on) =11.5 mW at VGS = −1.8 V, ID = −11 A • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability in a Widely Used Surface Mount Package • This Device is Pb−Free, Halide Free and is RoHS Compliant Applications • Load Switch • Battery Management • Power Management • Reverse Polarity Protection MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Volt... |
| Document |
 FDMC6686P Data Sheet
PDF 318.38KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDMC6686P |
Fairchild Semiconductor |
MOSFET |
|
| 2 | FDMC6688P |
Fairchild Semiconductor |
MOSFET |
|
| 3 | FDMC6688P |
ON Semiconductor |
P-Channel MOSFET |
|
| 4 | FDMC6675BZ |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 5 | FDMC6675BZ |
ON Semiconductor |
P-Channel MOSFET |
|