FDMC6686P |
Part Number | FDMC6686P |
Manufacturer | Fairchild Semiconductor |
Description | Max rDS(on) = 4 mΩ at VGS = -4.5 V, ID = -18 A Max rDS(on) = 5.7 mΩ at VGS = -2.5 V, ID = -16 A Max rDS(on) =11.5 mΩ at VGS = -1.8 V, ID = -11 A High performance trench technology for extreme... |
Features |
General Description
Max rDS(on) = 4 mΩ at VGS = -4.5 V, ID = -18 A Max rDS(on) = 5.7 mΩ at VGS = -2.5 V, ID = -16 A Max rDS(on) =11.5 mΩ at VGS = -1.8 V, ID = -11 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used
surface mount package
Lead-free and RoHS Compliant
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness.
Applications
Load Switch Battery Management Power Management Reverse ... |
Document |
FDMC6686P Data Sheet
PDF 204.12KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDMC6686P |
ON Semiconductor |
P-Channel MOSFET | |
2 | FDMC6688P |
Fairchild Semiconductor |
MOSFET | |
3 | FDMC6688P |
ON Semiconductor |
P-Channel MOSFET | |
4 | FDMC6675BZ |
Fairchild Semiconductor |
N-Channel MOSFET | |
5 | FDMC6675BZ |
ON Semiconductor |
P-Channel MOSFET |