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The FDMC6679AZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection. Max rDS(on) = 10 mΩ at VGS = -10 V, ID = -11.5 A Max rDS(on) = 18 mΩ at VGS = -4.5 V, ID = -8.5 A HBM ESD protection level of 8 kV typical(note 3) Ex.
General Description The FDMC6679AZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection. Max rDS(on) = 10 mΩ at VGS = -10 V, ID = -11.5 A Max rDS(on) = 18 mΩ at VGS = -4.5 V, ID = -8.5 A HBM ESD protection level of 8 kV typical(note 3) Extended VGSS range (-25 V) for battery applications High performance trench technology for extremely low rDS(on) High power and current handling capability Termination is Lead-free and RoHS Compliant Applications .
FDMC6679AZ - On Semiconductor
The FDMC6679AZ has been designed to minimize losses in load switch applications. Advancements in both silicon and packag.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDMC6675BZ |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FDMC6675BZ |
ON Semiconductor |
P-Channel MOSFET |
|
| 3 | FDMC6686P |
Fairchild Semiconductor |
MOSFET |
|
| 4 | FDMC6686P |
ON Semiconductor |
P-Channel MOSFET |
|
| 5 | FDMC6688P |
Fairchild Semiconductor |
MOSFET |
|
| 6 | FDMC6688P |
ON Semiconductor |
P-Channel MOSFET |
|
| 7 | FDMC6696P |
ON Semiconductor |
P-Channel Power MOSFET |
|
| 8 | FDMC610P |
Fairchild Semiconductor |
MOSFET |
|
| 9 | FDMC610P |
ON Semiconductor |
P-Channel MOSFET |
|
| 10 | FDMC612PZ |
Fairchild Semiconductor |
MOSFET |
|
| 11 | FDMC6296 |
Fairchild Semiconductor |
Single N-Channel Logic-Level Power Trench MOSFET |
|
| 12 | FDMC6890NZ |
Fairchild Semiconductor |
Dual N-Channel PowerTrench MOSFET |
|