This P-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Applications High side sw.
Max rDS(on) = 3.9 mΩ at VGS = -4.5 V, ID = -22 A Max rDS(on) = 6.4 mΩ at VGS = -2.5 V, ID = -16 A State-of-the-art switching performance Lower output capacitance, gate resistance, and gate charge boost efficiency Shielded gate technology reduces switch node ringing and increases immunity to EMI and cross conduction RoHS Compliant November 2013 General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has bee.
This P−Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDMC612PZ |
Fairchild Semiconductor |
MOSFET | |
2 | FDMC6296 |
Fairchild Semiconductor |
Single N-Channel Logic-Level Power Trench MOSFET | |
3 | FDMC6675BZ |
Fairchild Semiconductor |
N-Channel MOSFET | |
4 | FDMC6675BZ |
ON Semiconductor |
P-Channel MOSFET | |
5 | FDMC6679AZ |
On Semiconductor |
P-Channel MOSFET | |
6 | FDMC6679AZ |
Fairchild Semiconductor |
N-Channel MOSFET | |
7 | FDMC6686P |
Fairchild Semiconductor |
MOSFET | |
8 | FDMC6686P |
ON Semiconductor |
P-Channel MOSFET | |
9 | FDMC6688P |
Fairchild Semiconductor |
MOSFET | |
10 | FDMC6688P |
ON Semiconductor |
P-Channel MOSFET | |
11 | FDMC6696P |
ON Semiconductor |
P-Channel Power MOSFET | |
12 | FDMC6890NZ |
Fairchild Semiconductor |
Dual N-Channel PowerTrench MOSFET |