EPC2022 - EPC

EPC2022 Power Transistor

eGaN® FET DATASHEET EPC2022 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 3.2 mΩ ID , 90 A D G S EPC2022 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and .

Features

e: 6.05 mm x 2.3 mm
• High Speed DC-DC Conversion
• Motor Drive
• Industrial Automation
• Synchronous Rectification
• Inrush Protection
• Class-D Audio Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 0.4 RθJB Thermal Resistance, Junction-to-Board 1.1 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 42 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details. P.