eGaN® FET DATASHEET EPC2010C EPC2010C – Enhancement Mode Power Transistor VDS , 200 V RDS(on) , 25 mΩ ID , 22 A D G S EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG an.
• Ultra High Efficiency
• Ultra Low RDS(on)
• Ultra Low QG
• Ultra Small Footprint
Thermal Characteristics
PARAMETER
TYP
UNIT
RθJC Thermal Resistance, Junction-to-Case
1.1
RθJB Thermal Resistance, Junction-to-Board
2.7
°C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1)
56
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
PARAMETER
Static Characteristics (TJ = 25°C unless otherwise stated)
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | EPC2010 |
EPC |
Power Transistor | |
2 | EPC2012 |
EPC |
Power Transistor | |
3 | EPC2012C |
EPC |
Power Transistor | |
4 | EPC2014 |
EPC |
Power Transistor | |
5 | EPC2015 |
EPC |
Power Transistor | |
6 | EPC2015C |
EPC |
Power Transistor | |
7 | EPC2016 |
EPC |
Power Transistor | |
8 | EPC2016C |
EPC |
Power Transistor | |
9 | EPC2019 |
EPC |
Power Transistor | |
10 | EPC20 |
ACME |
EPC Cores | |
11 | EPC2001 |
EPC |
Power Transistor | |
12 | EPC2001C |
EPC |
Power Transistor |