EPC2021 - EPC

EPC2021 Power Transistor

eGaN® FET DATASHEET EPC2021 – 80 V (D-S) Enhancement Mode Power Transistor VDS , 80 V RDS(on) , 2.2 mΩ D G ID , 90 A S EPC2021 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionall.

Features

Thermal Resistance, Junction-to-Ambient (Note 1) 42 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details. EPC2021 eGaN® FETs are supplied only in passivated die form with solder bars. Die Size: 6.05 mm x 2.3 mm Applications
• High Frequency DC-DC Conversion
• Motor Drive
• Industrial Automation
• Synchronous Rectification
• Inrush Protection
• Class-D Audio Benefits
• Ultra High Efficiency
• No Reverse Recovery.