EPC2022 |
Part Number | EPC2022 |
Manufacturer | EPC |
Description | eGaN® FET DATASHEET EPC2022 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 3.2 mΩ ID , 90 A D G S EPC2022 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron m... |
Features |
e: 6.05 mm x 2.3 mm
• High Speed DC-DC Conversion • Motor Drive • Industrial Automation • Synchronous Rectification • Inrush Protection • Class-D Audio Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 0.4 RθJB Thermal Resistance, Junction-to-Board 1.1 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 42 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details. P... |
Document |
EPC2022 Data Sheet
PDF 1.51MB |
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