EPC2023 - EPC

EPC2023 Power Transistor

EPC2023 – Enhancement Mode Power Transistor Preliminary Specification Sheet Features: • VDS, 30 V • Maximum RDS(ON), 1.3 mΩ • ID, 60 A • Pb-Free (RoHS Compliant), Halogen Free Applications: • High Frequency DC-DC Conversion • Motor Drive • Industrial Automation • Synchronous Rectification • Inrush Protection • Point-of-Load (POL) Converters EPC2023 eGaN® F.

Features

• VDS, 30 V
• Maximum RDS(ON), 1.3 mΩ
• ID, 60 A
• Pb-Free (RoHS Compliant), Halogen Free Applications:
• High Frequency DC-DC Conversion
• Motor Drive
• Industrial Automation
• Synchronous Rectification
• Inrush Protection
• Point-of-Load (POL) Converters EPC2023 eGaN® FETs are supplied only in passivated die form with solder bars Die Size: 6.05 mm x 2.3 mm MAXIMUM RATINGS Parameter VDS (Maximum Drain
  – Source Voltage) VGS (Gate
  – Source Maximum Voltage Range) ID Continuous Drain Current, 25 °C, θJA = 13.5) ID (Maximum Pulsed Drain Current, 25 °C, Tpulse = 300 µs) TJ (Optimum Temperature .