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www.DataSheet.co.kr Ordering number : ENA1124 CPH3356 SANYO Semiconductors DATA SHEET CPH3356 Features • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications 1.8V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Cur.
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P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
1.8V drive Halogen free compliance Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings --20 ±10 --2.5 --10 1.0 150 --55 to +150 Unit V V A A W °C °C
Package Dimensions
unit : mm (typ) 7015A-004
Product & Pa.
CPH3356 - ON Semiconductor
CPH3356 Power MOSFET –20V, 137mΩ, –2.5A, Single P-Channel This Power MOSFET is produced using ON Semiconductor’s trenc.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CPH3350 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |
|
| 2 | CPH3350 |
ON Semiconductor |
P-Channel Power MOSFET |
|
| 3 | CPH3351 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |
|
| 4 | CPH3351 |
ON Semiconductor |
Power MOSFET |
|
| 5 | CPH3355 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |
|
| 6 | CPH3355 |
ON Semiconductor |
Power MOSFET |
|
| 7 | CPH3303 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 8 | CPH3304 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 9 | CPH3305 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 10 | CPH3306 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 11 | CPH3307 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 12 | CPH3308 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|