CPH3356 |
Part Number | CPH3356 |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | CPH3356 Power MOSFET –20V, 137mΩ, –2.5A, Single P-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on ... |
Features |
• Low On-Resistance • 1.8V drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS compliance Typical Applications • Load Switch • Motor Driver SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage VDSS −20 V Gate to Source Voltage VGSS ±10 V Drain Current (DC) ID −2.5 A Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP −10 A Power Dissipation When mounted on ceramic substrate (900mm2 × 0.8mm) PD 1W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding... |
Document |
CPH3356 Data Sheet
PDF 561.33KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CPH3350 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET | |
2 | CPH3350 |
ON Semiconductor |
P-Channel Power MOSFET | |
3 | CPH3351 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET | |
4 | CPH3351 |
ON Semiconductor |
Power MOSFET | |
5 | CPH3355 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |