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www.DataSheet.co.kr Ordering number : ENA1880 CPH3351 SANYO Semiconductors DATA SHEET CPH3351 Features • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)1=190mΩ(typ.) 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Volt.
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P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
ON-resistance RDS(on)1=190mΩ(typ.) 4V drive Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings --60 ±20 --1.8 --7.2 1 150 --55 to +150 Unit V V A A W °C °C
Package Dimensions
unit : mm (typ) 7015A-004
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CPH3351 - ON Semiconductor
CPH3351 Power MOSFET −60V, 250mΩ, −1.8A, Single P-Channel www.onsemi.com Features • Low On-Resistance • 4V Drive • ESD.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CPH3350 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |
|
| 2 | CPH3350 |
ON Semiconductor |
P-Channel Power MOSFET |
|
| 3 | CPH3355 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |
|
| 4 | CPH3355 |
ON Semiconductor |
Power MOSFET |
|
| 5 | CPH3356 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |
|
| 6 | CPH3356 |
ON Semiconductor |
Power MOSFET |
|
| 7 | CPH3303 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 8 | CPH3304 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 9 | CPH3305 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 10 | CPH3306 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 11 | CPH3307 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 12 | CPH3308 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|