Ordering number:EN5988 P-Channel MOS Silicon FET CPH3303 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. Package Dimensions unit:mm 2152 [CPH3303] 2.9 0.4 0.6 0.2 0.15 3 0 to 0.1 1.6 2.8 1 1.9 2 0.2 0.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Vol.
· Low ON resistance.
· Ultrahigh-speed switching.
· 2.5V drive.
Package Dimensions
unit:mm 2152
[CPH3303]
2.9 0.4
0.6 0.2
0.15
3
0 to 0.1
1.6 2.8
1 1.9
2
0.2
0.6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2×0.8mm) Conditions
0.7 0.9
1 : Gate 2 : Source 3 : Drain SANYO : CPH3
Ratings
–20 ±10
–1.6
–6.4 1.0 150
–55 to +15.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CPH3304 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
2 | CPH3305 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
3 | CPH3306 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
4 | CPH3307 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
5 | CPH3308 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
6 | CPH3313 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
7 | CPH3317 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
8 | CPH3319 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
9 | CPH3322 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
10 | CPH3323 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
11 | CPH3324 |
Sanyo Semicon Device |
General-Purpose Switching Device Applications | |
12 | CPH3325 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET General-Purpose Switching Device |