CPH3304 - Sanyo Semicon Device

CPH3304 Ultrahigh-Speed Switching Applications

Ordering number:EN5987 P-Channel MOS Silicon FET CPH3304 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2152 [CPH3304] 2.9 0.4 0.6 0.2 0.15 3 0 to 0.1 1.6 2.8 1 1.9 2 0.2 0.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Volta.

Features

· Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive. Package Dimensions unit:mm 2152 [CPH3304] 2.9 0.4 0.6 0.2 0.15 3 0 to 0.1 1.6 2.8 1 1.9 2 0.2 0.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2×0.8mm) Conditions 0.7 0.9 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Ratings
  –30 ±20
  –1.6
  –6.4 1.0 150
  –55 to +150 .