CPH3355 - ON Semiconductor

CPH3355 Power MOSFET

CPH3355 Power MOSFET –30V, 156mΩ, –2.5A, Single P-Channel www.onsemi.com Features • On-resistance RDS(on)1=120mΩ (typ) • 4V drive • Halogen free compliance Electrical Connection P-Channel 3 Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Unit Drain to Source Voltage Gate to Source Voltage Drain Current (DC) VDSS VGSS ID.

Features

• On-resistance RDS(on)1=120mΩ (typ)
• 4V drive
• Halogen free compliance Electrical Connection P-Channel 3 Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Unit Drain to Source Voltage Gate to Source Voltage Drain Current (DC) VDSS VGSS ID
  –30 ±20
  –2.5 V V A Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP
  –10 A Power Dissipation When mounted on ceramic substrate (900mm2×0.8mm) PD 1.0 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C This product is designed to “ESD immunity < 200V
*”, so please take care when handling.
*.