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CPH3308 - Sanyo Semicon Device

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CPH3308 Ultrahigh-Speed Switching Applications

Ordering number : ENN7075 CPH3308 P-Channel Silicon MOSFET CPH3308 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2152A [CPH3308] 2.9 0.4 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 0.6 3 0.05 1 1.9 2 0.6 1.6 2.8 0.7 0.9 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Specifications Absolute Maxi.

Features




• Package Dimensions unit : mm 2152A [CPH3308] 2.9 0.4 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 0.6 3 0.05 1 1.9 2 0.6 1.6 2.8 0.7 0.9 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions 0.2 Ratings --30 ± 20 --4 --16 1.2 150 --55 to +150 0.

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