The CHA6358-99F is a three stages monolithic HPA that typically provides an output power of 31dBm at 1dB gain compression associated to a high IP3 output of 38.5dBm. It is designed for a wide range of applications, from professional to commercial communication systems The circuit is manufactured with a pHEMT process, 0.15µm gate length. It is available in ch.
Output power (dBm)
■ Broadband performances: 27-31.5GHz
■ Pout: 31dBm at 1dB compression
■ OIP3: 38.5dBm
■ Linear gain: 22dB
■ DC bias: Vd=6.0Volt@Id=750mA
■ Chip size: 2.5x2.5x0.1mm
36 34 32 30
28
50 40 30 20
10
http://www.DataSheet4U.net/
P-1dB
26
Psat 29
PAE at 1dB
0
27
28
30
31
32
Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain OIP3 Output third order interception point Pout Output Power @1dB comp. Min 27.0 Typ 22 38.5 31 Max 31.5 Unit GHz dB dBm dBm
Ref. : DSCHA63583058 - 27 Feb 13
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Specifications sub.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CHA6356-QXG |
United Monolithic Semiconductors |
GaAs Monolithic Microwave | |
2 | CHA6362-QXG |
United Monolithic Semiconductors |
17.7 - 19.7GHz Power Amplifier | |
3 | CHA6005-99F |
United Monolithic Semiconductors |
GaAs Monolithic Microwave | |
4 | CHA6005-QEG |
United Monolithic Semiconductors |
GaAs Monolithic Microwave | |
5 | CHA6015-99F |
United Monolithic Semiconductors |
2-8GHz High Power Amplifier | |
6 | CHA6042 |
United Monolithic Semiconductors |
13-16GHz High Power Amplifier | |
7 | CHA6105 |
United Monolithic Semiconductors |
8-12GHz Driver Amplifier | |
8 | CHA6194-QXG |
United Monolithic Semiconductors |
37-40GHz Power Amplifier | |
9 | CHA6250-QFG |
United Monolithic Semiconductors |
5.5-9GHz Power Amplifier | |
10 | CHA6252-QFG |
United Monolithic Semiconductors |
13-15.5GHz Power Amplifier | |
11 | CHA6517 |
United Monolithic Semiconductors |
6 - 18 GHz High Power Amplifier | |
12 | CHA6518 |
United Monolithic Semiconductors |
5 - 18 GHz High Power Amplifier |