CHA6356-QXG - United Monolithic Semiconductors

CHA6356-QXG GaAs Monolithic Microwave

The CHA6356-QXG is a three stage monolithic GaAs high power circuit producing 2 Watt output power. It integrates a power UMSdetector and allows gain control. ESD protections are included. A366878AIt is designed for Point To Point Radio or YYWWGK-band Sat-Com application. YYWWG AU6M3YY5SAAAYY6UU333WW666MM686868WW7878SS78AAAGG YYWWUMS The circuit is man.

Features

36
■ Frequency range: 21.2- 23.6GHz 34
■ 33.5dBm saturated power
■ 42dBm OIP3
■ 20dB gain
■ DC bias: Vd = 6.0Volt @ Id = 1.3A
■ QFN5x6 UMS
■MSL3 Power (dBm) & PAE (%) 32 30 28 26 24 22 20 21 Power & PAE Psat P1dB PAE at Psat. 21.5 22 22.5 23 23.5 Frequency (GHz) SMU A786863A GWWYY SMU A786863A GWWYY UMS A366878A YYWWG UMS A366878A YYWWG 24 Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain Psat Saturated output power A3687AOIP3 OutputIP3 Min Typ Max Unit 21.2 23.6 GHz 20 dB 33.5 dBm 42 dBm Ref. : DSCHA6356-QXG5113 - 2.