CEU55A3 - CET

CEU55A3 N-Channel MOSFET

CED55A3/CEU55A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 38A, RDS(ON) = 14mΩ @VGS = 10V. RDS(ON) = 24mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PA.

Features

25V, 38A, RDS(ON) = 14mΩ @VGS = 10V. RDS(ON) = 24mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 25 ±20 38 152 31.25 0.25 Operating and Store Temperatu.