CEU01N6G - Chino-Excel Technology

CEU01N6G N-Channel MOSFET

N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1A, RDS(ON) = 9.3Ω @VGS = 10V. High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED01N6G/CEU01N6G D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Volt.

Features

600V, 1A, RDS(ON) = 9.3Ω @VGS = 10V. High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED01N6G/CEU01N6G D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 600 Units V V A A W W/ C C ±30 1 4 31 0.25 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristi.