CEU01N6 - CET

CEU01N6 N-Channel MOSFET

CED01N6/CEU01N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.9A, RDS(ON) = 15 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM .

Features

650V, 0.9A, RDS(ON) = 15 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD EAS IAS TJ,Tstg 650 Units V V A A W W/ C mJ A C ±30 0.9 3.6 31 0.25 60 0.8 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25.