CEU01N65 - Chino-Excel Technology

CEU01N65 N-Channel MOSFET

N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED01N65/CEU01N65 PRELIMINARY D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S A.

Features

650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED01N65/CEU01N65 PRELIMINARY D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 650 Units V V A A W W/ C C ±30 1.2 4.8 35.7 0.29 -55 to 150 Maximum Power Dissipation @ TC = 25 C - D.