CEU55A3 |
Part Number | CEU55A3 |
Manufacturer | CET |
Description | CED55A3/CEU55A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 38A, RDS(ON) = 14mΩ @VGS = 10V. RDS(ON) = 24mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). Hi... |
Features |
25V, 38A, RDS(ON) = 14mΩ @VGS = 10V. RDS(ON) = 24mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
25
±20
38 152 31.25 0.25
Operating and Store Temperatu... |
Document |
CEU55A3 Data Sheet
PDF 414.03KB |
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