CED540N/CEU540N N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 25A, RDS(ON) = 53mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM .
100V, 25A, RDS(ON) = 53mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 100 ±20 25 100 56 0.45 Operating and Store Temperature Range TJ,Tstg -55 to 175.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEU540A |
CET |
N-Channel MOSFET | |
2 | CEU540L |
Chino-Excel Technology |
N-Channel MOSFET | |
3 | CEU50N06 |
CET |
N-Channel MOSFET | |
4 | CEU510J |
Mallory |
Disc Ceramic Capacitors | |
5 | CEU5175 |
CET |
P-Channel MOSFET | |
6 | CEU51A3 |
CET |
N-Channel MOSFET | |
7 | CEU55A3 |
CET |
N-Channel MOSFET | |
8 | CEU55N10 |
CET |
N-Channel MOSFET | |
9 | CEU01N6 |
CET |
N-Channel MOSFET | |
10 | CEU01N65 |
Chino-Excel Technology |
N-Channel MOSFET | |
11 | CEU01N65A |
Chino-Excel Technology |
N-Channel MOSFET | |
12 | CEU01N6G |
Chino-Excel Technology |
N-Channel MOSFET |