CED540A/CEU540A N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 25A, RDS(ON) = 49mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RA.
100V, 25A, RDS(ON) = 49mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 100 Units V V A A W W/ C C ±20 25 100 68 0.45 -55 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEU540L |
Chino-Excel Technology |
N-Channel MOSFET | |
2 | CEU540N |
CET |
N-Channel MOSFET | |
3 | CEU50N06 |
CET |
N-Channel MOSFET | |
4 | CEU510J |
Mallory |
Disc Ceramic Capacitors | |
5 | CEU5175 |
CET |
P-Channel MOSFET | |
6 | CEU51A3 |
CET |
N-Channel MOSFET | |
7 | CEU55A3 |
CET |
N-Channel MOSFET | |
8 | CEU55N10 |
CET |
N-Channel MOSFET | |
9 | CEU01N6 |
CET |
N-Channel MOSFET | |
10 | CEU01N65 |
Chino-Excel Technology |
N-Channel MOSFET | |
11 | CEU01N65A |
Chino-Excel Technology |
N-Channel MOSFET | |
12 | CEU01N6G |
Chino-Excel Technology |
N-Channel MOSFET |