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Ordering number : ENN7415 2SC5811 NPN Triple Diffused Planar Silicon Transistor 2SC5811 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions unit : mm 2174A [2SC5811] 16.0 5.0 High speed. High breakdown voltage : VCBO=1600V. High reliability(Adoption of HVP process). Adoption of MBIT process. 3.4.
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Package Dimensions
unit : mm 2174A
[2SC5811]
16.0
5.0
High speed. High breakdown voltage : VCBO=1600V. High reliability(Adoption of HVP process). Adoption of MBIT process.
3.4
5.6 3.1
8.0 22.0
21.0 4.0
2.8 2.0
20.4
0.7
0.9
1
2
5.45
3
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions
1 : Base 2 : Collector 3 : Emitter SANY.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | C5812 |
Hitachi Semiconductor |
2SC5812 |
|
| 2 | C5813 |
Panasonic |
Silicon NPN Transistor |
|
| 3 | C5819 |
Toshiba Semiconductor |
2SC5819 |
|
| 4 | C580 |
Z-Communications |
VCO Model |
|
| 5 | C5800 |
Renesas |
NPN SILICON RF TRANSISTOR |
|
| 6 | C5801 |
NEC |
2SC5801 |
|
| 7 | C5802 |
SavantIC |
Silicon NPN Power Transistor |
|
| 8 | C5802D |
Fairchild Semiconductor |
KSC5802D |
|
| 9 | C5803 |
KEC |
KSC5803 |
|
| 10 | C5803 |
Inchange Semiconductor |
2SC5803 |
|
| 11 | C5803D |
KEC |
KSC5803 |
|
| 12 | C5804 |
Isahaya Electronics Corporation |
2SC5804 |
|