C5819 - Toshiba Semiconductor

C5819 2SC5819

2SC5819 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5819 High-Speed Switching Applications DC-DC Converter Applications Industrial Applications Unit: mm • High DC current gain: hFE = 400 to 1000 (IC = 0.15 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 45 ns (typ.) Absolute Maximum Ratings (Ta =.

Features

high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-10 Electrical Characteristics (Ta = 25°C) Characteristic.