Transistors 2SC5813 Silicon NPN epitaxial planar type For DC-DC converter Unit: mm ■ Features • Low collector-emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and 0.40+–00..0150 3 0.16+–00..0160 0.4±0.2 1.50–+00..0255 2.8–+00..32 automatic insertion through the tape packing 1 2 (0.95) (0.95) 5˚ (0.65).
• Low collector-emitter saturation voltage VCE(sat)
• Mini type package, allowing downsizing of the equipment and
0.40+
–00..0150 3
0.16+
–00..0160
0.4±0.2
1.50
–+00..0255 2.8
–+00..32
automatic insertion through the tape packing
1
2
(0.95) (0.95)
5˚
(0.65)
1.9±0.1
/
■ Absolute Maximum Ratings Ta = 25°C
2.90+
–00..0250
10˚
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
80
V
c e. d ty Collector-emitter voltage (Base open) VCEO
80
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
5
0 to 0.1 1.1
–+00..12 1.1
–+00..13
V
a e cle con Coll.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C5811 |
Sanyo Semicon Device |
2SC5811 | |
2 | C5812 |
Hitachi Semiconductor |
2SC5812 | |
3 | C5819 |
Toshiba Semiconductor |
2SC5819 | |
4 | C580 |
Z-Communications |
VCO Model | |
5 | C5800 |
Renesas |
NPN SILICON RF TRANSISTOR | |
6 | C5801 |
NEC |
2SC5801 | |
7 | C5802 |
SavantIC |
Silicon NPN Power Transistor | |
8 | C5802D |
Fairchild Semiconductor |
KSC5802D | |
9 | C5803 |
KEC |
KSC5803 | |
10 | C5803 |
Inchange Semiconductor |
2SC5803 | |
11 | C5803D |
KEC |
KSC5803 | |
12 | C5804 |
Isahaya Electronics Corporation |
2SC5804 |