·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for high voltage color display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage www.DataSheet4U.com w w .
IC= 8A; IB= 2A B 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 2A B 1.5 V ICES Collector Cutoff Current VCE= 1400V; VBE= 0 1.0 mA ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain Switching Times tstg Storage Time www.DataSheet4U.com tf Fall Time w . w w IC= 8A; VCE= 5V n c . i m e s c is 15 5.5 1.0 mA 40 8.5 4.0 μs IC= 7A, IB1= 1.4A; IB2= -2.8A; VCC= 200V; RL= 28.6Ω 0.3 μs isc Website:www.iscsemi.cn 2 .
www.DataSheet4U.com KSC5803 KSC5803 High Voltage Color Display Horizontal Deflection Output (No Damper Diode) • • • • .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C580 |
Z-Communications |
VCO Model | |
2 | C5800 |
Renesas |
NPN SILICON RF TRANSISTOR | |
3 | C5801 |
NEC |
2SC5801 | |
4 | C5802 |
SavantIC |
Silicon NPN Power Transistor | |
5 | C5802D |
Fairchild Semiconductor |
KSC5802D | |
6 | C5803D |
KEC |
KSC5803 | |
7 | C5804 |
Isahaya Electronics Corporation |
2SC5804 | |
8 | C5811 |
Sanyo Semicon Device |
2SC5811 | |
9 | C5812 |
Hitachi Semiconductor |
2SC5812 | |
10 | C5813 |
Panasonic |
Silicon NPN Transistor | |
11 | C5819 |
Toshiba Semiconductor |
2SC5819 | |
12 | C5824 |
Rohm |
2SC5824 |