·With TO-3P(H)IS package ·High voltage;high speed ·Wide area of safe operation APPLICATIONS ·For high voltage color display horizontal deflection output applications www.DataSheet4U.com PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SC5802 Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM.
ollector cut-off current Emitter cut-off current DC current gain DC current gain Fall time CONDITIONS IC=6A; IB=1.5A IC=6A; IB=1.5A VCE=1400V; VBE=0 VCB=800V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=5V IC=6A ; VCE=5V VCC=200V; IC=6A;IB1=1.2A IB2=-2.4A;RL =33.3? 15 7 0.1 MIN TYP. MAX 3.0 1.5 1.0 10 1.0 48 10 0.3 µs UNIT V V mA µA mA SYMBOL VCEsat www.DataSheet4U.com VBEsat ICES ICBO IEBO hFE-1 hFE-2 tf 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5802 www.DataSheet4U.com Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C580 |
Z-Communications |
VCO Model | |
2 | C5800 |
Renesas |
NPN SILICON RF TRANSISTOR | |
3 | C5801 |
NEC |
2SC5801 | |
4 | C5802D |
Fairchild Semiconductor |
KSC5802D | |
5 | C5803 |
KEC |
KSC5803 | |
6 | C5803 |
Inchange Semiconductor |
2SC5803 | |
7 | C5803D |
KEC |
KSC5803 | |
8 | C5804 |
Isahaya Electronics Corporation |
2SC5804 | |
9 | C5811 |
Sanyo Semicon Device |
2SC5811 | |
10 | C5812 |
Hitachi Semiconductor |
2SC5812 | |
11 | C5813 |
Panasonic |
Silicon NPN Transistor | |
12 | C5819 |
Toshiba Semiconductor |
2SC5819 |