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C5811 |
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| Part Number | C5811 |
| Manufacturer | Sanyo Semicon Device |
| Description | Ordering number : ENN7415 2SC5811 NPN Triple Diffused Planar Silicon Transistor 2SC5811 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimension... |
| Features |
• • • • Package Dimensions unit : mm 2174A [2SC5811] 16.0 5.0 High speed. High breakdown voltage : VCBO=1600V. High reliability(Adoption of HVP process). Adoption of MBIT process. 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions 1 : Base 2 : Collector 3 : Emitter SANY... |
| Document |
 C5811 Data Sheet
PDF 29.43KB |
| Distributor | Stock | Price | Buy |
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