C5812 - Hitachi Semiconductor

C5812 2SC5812

2SC5812 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1468(Z) Rev.0 Nov. 2001 Features • High power gain, Low noise figure at low power operation: |S21|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) Outline MFPAK Note: Marking is “WG–“. 3 1 2 1. Emitter 2. Base 3. Collector 2SC5812 Absolute Maximum Ratings (Ta = 25°C) I.

Features

• High power gain, Low noise figure at low power operation: |S21|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) Outline MFPAK Note: Marking is “WG
  –“. 3 1 2 1. Emitter 2. Base 3. Collector 2SC5812 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 4 1.5 50 80 150 −55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Uni.