BSP89 - Siemens Semiconductor Group

BSP89 SIPMOS Small-Signal Transistor

BSP 89 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 G Type BSP 89 Type BSP 89 Pin 2 D Pin 3 S Pin 4 D VDS 240 V ID 0.36 A RDS(on) 6Ω Package SOT-223 Marking BSP 89 Ordering Code Q67000-S652 Tape and Reel Information E6327 Maximum Ratings Parameter Drain source voltage Drain-gate voltage .

Features

JA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 240 1.5 0.1 10 10 3.5 4 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 0.8 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 0.2 µA VDS = 240 V, VGS = 0 V, Tj = 25 °C VDS = 240 V, VGS = 0 V, Tj = 125 °C VDS = 60 V, VGS = 0 V, Tj = 25 °C Gate-source leakage current IGSS 100.