BSP88 - Infineon Technologies AG

BSP88 SIPMOS Small-Signal-Transistor

and charts stated herein. Infineon Technologies is an approved CECC manufacturer. BSP88 Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requiremen.

Features

ling area 1) BSP88 Symbol min. RthJS RthJA 115 70 Values typ. max. 25 K/W Unit Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0, ID=250µA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) RDS(on) 240 0.6 Values typ. 1 max. 1.4 Unit V Gate threshold voltage, VGS = VDS ID=108µA Zero gate voltage drain current V DS=240V, VGS=0, Tj=25°C V DS=240V, VGS=0, Tj=150°C µA 1 4.9 4.6 4 0.1 10 10 15 7.5 6 nA W Gate-source leakage current V GS=20V, VDS=0 Drain-source on-state resistance V GS=2.8V, ID.