N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope. Intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer driver switching. PINNING - SOT223 PIN 1 2 3 4 gate drain source drain Fig.1 Simplified outline and symbol. DESCRIPTION 1 Top view 2 3 MAM054 BSP1.
• Direct interface to C-MOS, TTL, etc. due to low threshold voltage
• High-speed switching
• No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope. Intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer driver switching. PINNING - SOT223 PIN 1 2 3 4 gate drain source drain Fig.1 Simplified outline and symbol. DESCRIPTION
1 Top view 2 3
MAM054
BSP107
QUICK REFERENCE DATA SYMBOL VDS VGS(th) ID RDS(on) PARAMETER drain-source voltage (DC) gate-source threshol.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSP100 |
NXP |
N-channel enhancement mode TrenchMOS transistor | |
2 | BSP100 |
NXP |
N-channel enhancement mode TrenchMOS transistor | |
3 | BSP106 |
NXP |
N-channel enhancement mode vertical D-MOS transistor | |
4 | BSP108 |
NXP |
N-channel enhancement mode vertical D-MOS transistor | |
5 | BSP110 |
NXP |
N-channel enhancement mode vertical D-MOS transistor | |
6 | BSP120 |
NXP |
N-channel enhancement mode vertical D-MOS transistor | |
7 | BSP121 |
NXP |
N-channel enhancement mode vertical D-MOS transistor | |
8 | BSP122 |
NXP |
N-channel enhancement mode vertical D-MOS transistor | |
9 | BSP123 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) | |
10 | BSP123 |
Infineon Technologies AG |
SIPMOS Small-Signal-Transistor | |
11 | BSP125 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Enhancement mode) | |
12 | BSP125 |
Infineon Technologies AG |
SIPMOS Power-Transistor |