BSP106 - NXP

BSP106 N-channel enhancement mode vertical D-MOS transistor

N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line transformer drivers. PINNING - SOT223 PIN 1 2 3 4 gate drain source drain 1 Top view 2 3 MAM054 BSP106 QUICK REFERENCE DATA SYMBOL VDS ID RDS(on) VGS(th) PARAMETER drain-source voltage drain current drain-source on-resistan.

Features

• Very low RDS(on)
• Direct interface to C-MOS, TTL, etc.
• High-speed switching
• No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line transformer drivers. PINNING - SOT223 PIN 1 2 3 4 gate drain source drain 1 Top view 2 3 MAM054 BSP106 QUICK REFERENCE DATA SYMBOL VDS ID RDS(on) VGS(th) PARAMETER drain-source voltage drain current drain-source on-resistance gate-source threshold voltage CONDITIONS − DC value ID = 200 mA VGS = 10 V ID = 1 mA VGS = VDS MAX. 60 425 4 3 UNIT V .