BSP108 - NXP

BSP108 N-channel enhancement mode vertical D-MOS transistor

N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line-transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown PINNING - SOT223 1 2 3 4 = gate = drain = source = drain ID = 500 mA; VGS = 10 V Transfer admittance ID = 50.

Features

• Direct interface to C-MOS, TTL, etc.
• High-speed switching
• No secondary breakdown PINNING - SOT223 1 2 3 4 = gate = drain = source = drain ID = 500 mA; VGS = 10 V Transfer admittance ID = 500 mA; VDS = 15 V  Yfs  RDS(on) QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source ON-resistance VDS ± VGSO ID Ptot BSP108 max. max. max. max. typ. max. 80 V 20 V 500 mA 1.5 W 2.0 Ω 3.0 Ω min. typ. 150 mS 300 mS Marking code BSP108 PIN CONFIGURATION handbook, halfpage 4 d g 1 Top view 2 3 M.