N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSP030 in SOT223. 2. Features s TrenchMOS™ technology s Fast switching s Low on-state resistance s Logic level compatible s Surface mount package. 3. Applications s Motor and actuator driver c c s Battery management s High speed, low .
s TrenchMOS™ technology s Fast switching s Low on-state resistance s Logic level compatible s Surface mount package. 3. Applications s Motor and actuator driver c c s Battery management s High speed, low resistance switch. 4. Pinning information Table 1: Pinning - SOT223, simplified outline and symbol Pin Description Simplified outline 1 gate (g) 2 drain (d) 4 3 source (s) 4 drain (d) 03ab45 1 23 SOT223 Symbol d g 03ab30 s N-channel MOSFET 1. TrenchMOS is a trademark of Royal Philips Electronics. Philips Semiconductors BSP030 N-channel enhancement mode field-effect transistor 5..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSP090 |
NXP |
P-channel enhancement mode vertical D-MOS transistor | |
2 | BSP100 |
NXP |
N-channel enhancement mode TrenchMOS transistor | |
3 | BSP100 |
NXP |
N-channel enhancement mode TrenchMOS transistor | |
4 | BSP106 |
NXP |
N-channel enhancement mode vertical D-MOS transistor | |
5 | BSP107 |
NXP |
N-channel enhancement mode vertical D-MOS transistor | |
6 | BSP108 |
NXP |
N-channel enhancement mode vertical D-MOS transistor | |
7 | BSP110 |
NXP |
N-channel enhancement mode vertical D-MOS transistor | |
8 | BSP120 |
NXP |
N-channel enhancement mode vertical D-MOS transistor | |
9 | BSP121 |
NXP |
N-channel enhancement mode vertical D-MOS transistor | |
10 | BSP122 |
NXP |
N-channel enhancement mode vertical D-MOS transistor | |
11 | BSP123 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) | |
12 | BSP123 |
Infineon Technologies AG |
SIPMOS Small-Signal-Transistor |