BSM50GD120DN2G - Siemens Semiconductor Group

BSM50GD120DN2G IGBT

BSM 50 GD 120 DN2G IGBT Power Module Preliminary data • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 50 GD 120 DN2G Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V VCE IC Package ECONOPACK 3 Ordering Code C67070-A2521-A67.

Features

2G Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 0.8 4 6.5 3 3.7 V VGE = VCE, IC = 2 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 50 A, Tj = 25 °C VGE = 15 V, IC = 50 A, Tj = 125 °C Zero gate voltage collector current ICES 1 - mA VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C Gate-emitter leakage current IGES 200 nA VGE = 20 V, VCE = 0 V AC Characteristics Transconductance gfs 23 3300 500 220 - S.