BSM50GD120DLC - eupec

BSM50GD120DLC IGBT

Technische Information / Technical Information IGBT-Module IGBT-Modules BSM50GD120DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector curren.

Features

er Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage IC = 50A, VGE = 15V, Tvj = 25°C IC = 50A, VGE = 15V, Tvj = 125°C IC = 2mA, VCE = VGE, Tvj = 25°C Gateladung gate charge VGE = -15V...+15V Eingangskapazität input capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Rückwirkungskapazität reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V VCE = 1200V, V GE = 0V, Tvj = 25°C VCE = 1200V, V GE = 0V, Tvj = 125°.