BSM50GD120DN2G |
Part Number | BSM50GD120DN2G |
Manufacturer | eupec |
Description | BSM 50 GD 120 DN2G IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 50 GD 120 DN2G VCE IC 1200V 78A Pack... |
Features |
cteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
max.
Static Characteristics
Gate threshold voltage
VGE(th)
VGE = VCE, IC = 2 mA
4.5
5.5
6.5
Collector-emitter saturation voltage
VCE(sat)
VGE = 15 V, IC = 50 A, Tj = 25 °C
-
2.5
3
VGE = 15 V, IC = 50 A, Tj = 125 °C
-
3.1
3.7
Zero gate voltage collector current
ICES
VCE = 1200 V, VGE = 0 V, Tj = 25 °C
-
0.8
1
VCE = 1200 V, VGE = 0 V, Tj = 125 °C
-
4
-
Gate-emitter leakage current
IGES
VGE = 20 V, VCE = 0 V
-
-
200
AC Characteristics Transconductance VCE = 20 V, IC = 50... |
Document |
BSM50GD120DN2G Data Sheet
PDF 235.24KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSM50GD120DN2 |
Siemens Semiconductor Group |
IGBT | |
2 | BSM50GD120DN2E3226 |
Siemens Semiconductor Group |
IGBT | |
3 | BSM50GD120DN2G |
Siemens Semiconductor Group |
IGBT | |
4 | BSM50GD120DLC |
eupec |
IGBT | |
5 | BSM50GD170DL |
eupec |
IGBT |