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BSM50GD120DN2G |
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| Part Number | BSM50GD120DN2G |
| Manufacturer | Siemens Semiconductor Group |
| Description | BSM 50 GD 120 DN2G IGBT Power Module Preliminary data • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 50 GD 120 DN2G Maximum... |
| Features |
2G
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.5 3.1 0.8 4 6.5 3 3.7
V
VGE = VCE, IC = 2 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 50 A, Tj = 25 °C VGE = 15 V, IC = 50 A, Tj = 125 °C
Zero gate voltage collector current
ICES
1 -
mA
VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C
Gate-emitter leakage current
IGES
200
nA
VGE = 20 V, VCE = 0 V
AC Characteristics Transconductance
gfs
23 3300 500 220 -
S... |
| Document |
 BSM50GD120DN2G Data Sheet
PDF 182.91KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BSM50GD120DN2 |
Siemens Semiconductor Group |
IGBT |
|
| 2 | BSM50GD120DN2E3226 |
Siemens Semiconductor Group |
IGBT |
|
| 3 | BSM50GD120DN2G |
eupec |
IGBT |
|
| 4 | BSM50GD120DLC |
eupec |
IGBT |
|
| 5 | BSM50GD170DL |
eupec |
IGBT |
|