BSM50GB170DN2 - Siemens Semiconductor Group

BSM50GB170DN2 IGBT

BSM 50 GB 170 DN2 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • RG on,min = 27 Ohm Type BSM 50 GB 170 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1700 1700 Unit V VCE IC Package HALF-BRIDGE 1 Ordering Code C67070-A2701-A6.

Features

DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.8 5.5 3.4 4.6 0.4 1.6 6.2 3.9 5.3 V VGE = VCE, IC = 4 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 50 A, Tj = 25 °C VGE = 15 V, IC = 50 A, Tj = 125 °C Zero gate voltage collector current ICES 0.5 - mA VCE = 1700 V, VGE = 0 V, Tj = 25 °C VCE = 1700 V, VGE = 0 V, Tj = 125 °C Gate-emitter leakage current IGES 320 nA VGE = 20 V, VCE = 0 V AC Characteristics Transconductance gfs 18 8 0.64 0.2.