BSM400GB60DN2 - Siemens Semiconductor Group

BSM400GB60DN2 IGBT

BSM 400 GB 60 DN2 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 400 GB 60 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage VCE 600V IC 475A Package HALF-BRIDGE 2 Ordering Code C67070-A2120-A67 Symbol Values 600 600 Unit V VCE VC.

Features

al Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 6.5 V VGE = VCE, IC = 9 mA Collector-emitter saturation voltage VCE(sat) VGE = 15 V IC = 400 A Tj = 25 °C Tj = 125 °C Zero gate voltage collector current 2.1 2.2 5 25 2.55 2.65 mA µA 1 ICES VCE = 600 V, VGE = 0 V, Tj = 25 °C VCE = 600 V, VGE = 0 V, Tj = 125 °C Gate-emitter leakage current IGES VGE = 20 V, VCE = 0 V AC Characteristics Transconductance gfs 100 22 2.5 1.5 - S nF - VCE = 20 V, IC = 400 A Input capacitanc.