Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 100 GB 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Tc= 70°C Tc= 25°C Periodischer Kollektor Spitzenstrom repetit.
nsistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage IC= 100A, VGE= 15V, Tvj= 25°C IC= 100A, VGE= 15V, Tvj= 125°C Gate-Schwellenspannung gate threshold voltage IC= 1,5mA, VCE= VGE, Tvj= 25°C Eingangskapazität input capacitance Rückwirkungskapazität reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V VCE= 600V, VGE= 0V, Tvj= 25°C VCE= 600V, VGE= 0V, Tvj= 125°C VCE= 0V, VGE= 20V, Tvj= 25°C min. typ. max. - 1,95 2,45 V VCE sat - .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSM100GB120DN2 |
Siemens Semiconductor Group |
IGBT | |
2 | BSM100GB120DN2K |
Siemens Semiconductor Group |
IGBT | |
3 | BSM100GB170DN2 |
Siemens Semiconductor Group |
IGBT | |
4 | BSM100GAL120DN2 |
Siemens Semiconductor Group |
IGBT | |
5 | BSM100GD120DLC |
eupec GmbH |
IGBT-Module | |
6 | BSM100GD120DN2 |
Siemens Semiconductor Group |
IGBT | |
7 | BSM100GT120DN2 |
Siemens Semiconductor Group |
IGBT | |
8 | BSM101AR |
Siemens Semiconductor Group |
IGBT | |
9 | BSM10GD120DN2 |
eupec |
IGBT | |
10 | BSM10GD120DN2E3224 |
eupec |
IGBT | |
11 | BSM10GD60DN2 |
Siemens Semiconductor Group |
IGBT | |
12 | BSM10GP60 |
eupec GmbH |
IGBT-Module |